iimpawu zemveliso
UHLOBO
CHAZA
udidi
IiMveliso zeSemiconductor eziDibeneyo
Transistor – FET, MOSFET – One
umenzi
I-Infineon Technologies
uthotho
CoolGaN™
Iphakheji
Iteyiphu kunye neReel (TR)
Shear Band (CT)
I-Digi-Reel® Custom Reel
Ubume beMveliso
iyekisiwe
Uhlobo lwe-FET
N itshaneli
iteknoloji
I-GaNFET (Gallium Nitride)
I-Drain-Source Voltage (Vdss)
600V
Ngoku ku-25°C – Ukutsalwa kwamanzi okuqhubekayo (Id)
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
On-resistance (max) kwi Id ezahlukeneyo, Vgs
-
Vgs(th) (ubuninzi) kwii-Ids ezahlukeneyo
1,6V @ 2,6mA
Vgs (ubuninzi)
-10V
Igalelo lamandla (Ciss) kwiiVds ezahlukeneyo (max)
380pF @ 400V
Umsebenzi weFET
-
Ukutshatyalaliswa kwamandla (ubuninzi)
125W (Tc)
ubushushu bokusebenza
-55°C ~ 150°C (TJ)
uhlobo lofakelo
Uhlobo lweNtaba yoMphezulu
Supplier Device Packaging
PG-DSO-20-87
Ipakethe/Indawo ebiyelweyo
20-PowerSOIC (0.433″, 11.00mm ububanzi)
Inombolo yemveliso esisiseko
IGOT60
Imidiya kunye nokukhutshelwa
UHLOBO LWEZIBONELELO
LINK
Iinkcukacha
IGOT60R070D1
Isikhokelo soKhetho lweGaN
I-CoolGaN™ 600 V e-mowudi ye-GaN HEMTs emfutshane
Amanye amaxwebhu anxulumeneyo
I-GaN kwii-Adapter/iitshaja
I-GaN kwiSeva kunye neTelecom
Ukunyaniseka kunye nokufaneleka kweCoolGaN
Kutheni iCoolGaN
I-GaN kwi-Wireless Charging
ifayile yevidiyo
I-CoolGaN™ 600V i-e-mowudi ye-HEMT iqonga lokuvavanya ibhulorho enesiqingatha ene-GaN EiceDRIVER™
I-CoolGaN™ – iparadigm yamandla entsha
Ibhodi yovavanyo ye-2500 W yebhulorho epheleleyo ye-totem ye-PFC isebenzisa i-CoolGaN™ 600 V
Iinkcukacha zeHTML
I-CoolGaN™ 600 V e-mowudi ye-GaN HEMTs emfutshane
IGOT60R070D1
Ulwahlulo lokusiNgqongileyo nokuThunyelelwa kwamanye amazwe
IIMPAWU
CHAZA
Ubume beRoHS
Iyahambelana neenkcukacha ze-ROHS3
iNqanaba lokuSenza ukufuma (MSL)
3 (168 iiyure)
FIKA ubume
Iimveliso ezinga-REACH
ECCN
I-EAR99
HTSUS
8541.29.0095
